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SSM6K18TU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS)
SSM6K18TU
High Current Switching Applications
* * Suitable for high-density mounting due to compact package Low on resistance: Ron = 54 m (max) (@VGS = 2.5 V) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating 20 12 4 8 500 150 -55~150 Unit V V A mW C C
1,2,5,6 : Drain 3 : Gate 4 : Source
JEDEC
Note:
Using continuously under heavy loads (e.g. the application of JEITA high temperature/current/voltage and the significant change in TOSHIBA temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 7 mg (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on FR4 board. 2 (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 645 mm )
Marking
6 5 4
Equivalent Circuit (Top View)
6 5 4
KNA
1
2
3
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic discharge. Operators should wear anti-static clothing and use containers and other objects that are made of anti-static materials.
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SSM6K18TU
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS V (BR) DSX IDSS Vth Yfs RDS (ON) Ciss Crss Coss ton toff Test Condition VGS = 12 V, VDS = 0 ID = 1 mA, VGS = 0 ID = 1 mA, VGS = -12 V VDS = 20 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 2 A ID = 2 A, VGS = 4 V ID = 2 A, VGS = 2.5 V VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDD = 10 V, ID = 2 A, VGS = 0~2.5 V, RG = 4.7 (Note2) (Note2) (Note2) Min 20 12 0.5 5.5 Typ. 34 41 1100 160 185 43 50 Max 1 1 1.1 40 54 Unit A V A V S m pF pF pF ns
Note2: Pulse test
Switching Time Test Circuit
(a) Test Circuit (b) VIN
OUT IN 0V RG 10 s VDD = 10 V RG = 4.7 < D.U. = 1% VIN: tr, tf < 5 ns Common Source Ta = 25C 10% 2.5 V 90%
2.5 V 0
VDD
(c) VOUT
VDD
90% 10% tr ton tf toff
VDS (ON)
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 A for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device.
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SSM6K18TU
ID - VDS
8 4V 7 6 2.5V 1.8V Common Source Ta = 25C 10000 Common Source VDS = 3 V 1000 1.5V 5 4 3 2 1 0 0 0.5 1 1.5 2 0.01 0
ID - VGS
(A)
(mA)
100
Ta = 100C
Drain current ID
Drain current ID
10 25C 1 -25C
VGS=1.2V
0.1
0.5
1
1.5
2
2.5
Drain-Source voltage
VDS
(V)
Gate-Source voltage
VGS (V)
RDS (ON) - ID
100 Common Source Ta = 25C 80 200
RDS (ON) - VGS
ID = 2 A Common Source
Drain-Source on resistance RDS (ON) (m)
Drain-Source on resistance RDS (ON) (m)
150
60 2.5V 40 4V 20
100
50
25C
Ta = 100C
-25C 0 0 2 4 6 8 0 0 2 4 6 8 10 12
Drain current ID (A)
Gate-Source voltage
VGS (V)
RDS (ON) - Ta
100 Common Source ID = 2A 1.2
Vth - Ta
Common Source
Vth (V)
Drain-Source on resistance RDS (ON) (m)
80
1.0
VDS = 3V ID = 0.1 mA
0.8
60
2.5 V
Gate threshold voltage
150
0.6
40 VGS = 4 V 20
0.4
0.2
0 -50
0
50
100
0 -25
0
25
50
75
100
125
150
Ambient temperature Ta (C)
Ambient temperature Ta (C)
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SSM6K18TU
|Yfs| - ID
30 10 5000 3000 Ciss 1000
C - VDS
Forward transfer admittance |Yfs| (S)
(pF) Capacitance C
3 1 0.3 0.1 Common Source 0.03 0.01 1 VDS = 3V Ta = 25C 10 100 1000 10000
500 300 Crss Coss
100 50 30 Common Source Ta = 25C f = 1 MHz VGS = 0 V 1
10 0.1
10
100
Drain current ID (mA)
Drain-Source voltage
VDS
(V)
Dynamic Input Characteristic
10 9 1000
Switching Time
Common Source VDD = 10 V VGS = 02.5V Ta = 25C RG = 4.7 100 tf toff
VGS (V)
8 7 6 5 4 3 2 1 0 0 Common Source ID = 4 A Ta = 25C 10 20 30 35 1 0.01 0.1 1 VDD = 10V
Gate-Source voltage
VDD = 16 V
Switching time t (ns)
ton 10 tr
10
Total gate charge Qg (nC)
Drain current ID (A)
IDR - VDS
8 Common Source
(A)
VGS = 0 Ta = 25C 6
D IDR S
IDR
Drain reverse current
G
4
2
0 0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
Drain-Source voltage
VDS
(V)
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SSM6K18TU
rth - tw rth (C/W )
1000 Single pulse Mounted on FR4 board 2 (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 645 mm )
Transient thermal impedance
100
10
1 0.001
0.01
0.1
1
10
100
1000
Pulse width
tw
(s)
Safe Operating Area
10 ID max (pulse) * 3 10 ms* 1.2 1 ms* 1 Mounted on FR4 board
PD - Ta
(W)
1 ID max (continuous) DC operation 0.1 Ta = 25C Mounted on FR4 board 0.03 (25.4 mm x 25.4 mm x 1.6 t 2 Cu pad: 645 mm ) * Single Pulse Ta = 25C 0.003 Curves must be derated linearly with increase in temperature. 0.001 0.1 0.3 1 3 10 30 100
(A)
10s*
t = 10 s 0.8
(25.4 mm x 25.4 mm x 1.6 t, 2 Cu Pad: 645 mm )
0.3
Power dissipation PD
ID
0.6 DC 0.4
Drain current
0.2
0.01 0 0 50 100 150
Ambient temperature Ta (C)
Drain-Source voltage
VDS
(V)
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN GENERAL
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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